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[期刊论文] 作者：Zhu Shi-Yang,Ru Guo-Ping,Zhou Jia,Huang Yi-Ping,
来源：中国物理（英文版） 年份：2005
The current-voltage (I-V) characteristics of Ni silicide/n-Si(100) contacts, which were formed from solid-state reaction of Ni-Si with a thin Ti capping layer a...
,Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of ba
[期刊论文] 作者：Ru Guo-Ping,Yu Rong,Jiang Yu-Long,Ruan Gang,
来源：中国物理B（英文版） 年份：2010
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,Trapezoid mesa trench metal-oxide semiconductor barrier Schottky rectifier: an improved Schottky re
[期刊论文] 作者：Li Wei-Yi,Ru Guo-Ping,Jiang Yu-Long,Ruan Gang,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：ZHOU Mi,CHEN Tao,TAN Jing-Jing,RU Guo-Ping,JIANG Yu-Long,LIU Ran,QU Xin-Ping,
来源：中国物理快报（英文版） 年份：2007
The polycrystalline ruthenium films are grown on TaN substrates by atomic layer deposition (ALD) using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as rut...
[期刊论文] 作者：Zhu Shi-Yang(竺士炀),Ru Guo-Ping(茹国平),Qu Xin-Ping(屈新萍),Li Bing-Zong(李炳宗),R.L.Van Meirhaeghe,C.Detavernier,
来源：中国物理（英文版） 年份：2002
The forward current-voltage (I-V) characteristics of polycrystalline CoSi2/n-Si(100) Schottky contacts have beenmeasured in a wide temperature range. At low tem...
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