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[期刊论文] 作者：Ahsan Habib,Subrata Das,Saeed Mahmud Ullah,Shahida Rafique,,
来源：Optoelectronics Letters 年份：2013
Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed f...
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