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,High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma o
[期刊论文] 作者：Xin-Yu Liu,Ji-Long Hao,Nan-Nan You,Yun Bai,Yi-Dan Tang,Cheng-Yue Yang,Sheng-Kai Wang,
来源：中国物理B（英文版） 年份：2020
The microwave plasma oxidation under the relatively high pressure (6 kPa) region is introduced into the fabrication process of SiO2/4H-SiC stack. By controlling...
[期刊论文] 作者：Peng Liu,Ji-Long Hao,Sheng-Kai Wang,Nan-Nan You,Qin-Yu Hu,Qian Zhang,Yun Bai,Xin-Yu Liu,
来源：中国物理B（英文版） 年份：2021
The effects of dry O2 post oxidation annealing (POA) at different temperatures on SiC/SiO2 stacks are comparatively studied in this paper.The results show inter...
[期刊论文] 作者：Ji-Long Hao,Yun Bai,Xin-Yu Liu,Cheng-Zhan Li,Yi-Dan Tang,Hong Chen,Xiao-Li Tian,Jiang Lu,Sheng-Kai Wang,
来源：中国物理B（英文版） 年份：2020
Effective improvement in electrical properties of NO passivated SiC/SiO2 interface after being irradiated by electrons is demonstrated.The density of interface...
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