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[期刊论文] 作者：S.Theodore Chandra,N.B.Balamurugan,G.Subalakshmi,T.Shalini,G.Lakshmi Priya,,
来源：Journal of Semiconductors 年份：2014
We have developed a 2D analytical model for the single gate AlInSb/InSb HEMT device by solving the Poisson equation using the parabolic approximation method.The...
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