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[期刊论文] 作者：Tan Changxing Chen Zhiming P,
来源：中国稀土学报：英文版 年份：2006
Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and...
[期刊论文] 作者：Tan Changxing,Chen Zhiming,Pu,
来源：稀土学报（英文版） 年份：2004
Growth of SiCGe ternary alloy on 6H-SiC in a conventional hot-wall CVD system was initially studied. SiH4, GeH4 and C3H8 were employed as silicon, germanium and...
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