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[期刊论文] 作者：Wu Jie-Jun,Wang Kun,Yu Tong-Jun,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2015
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,Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN f
[期刊论文] 作者：Zhao Lu-Bing,Yu Tong-Jun,Wu Jie-Jun,Yang Zhi-Jian,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2010
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,Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped AlxGa1-xN/GaN Heteros
[期刊论文] 作者：HAN Xiu-Xun,WU Jie-Jun,LI Jie-Min,CONG Guang-Wei,LIU Xiang-Lin,ZHU Qin-Sheng,WANG Zhan-Guo,
来源：中国物理快报（英文版） 年份：2005
Low-temperature photoluminescence measurement is performed on an undoped Alx Ga1-xN/GaN heterostructure. Temperature-dependent Hall mobility confirms the format...
[期刊论文] 作者：ZHAO Lu-Bing,WU Jie-Jun,XU Ke,BAO Sui,YANG Zhi-Jian,PAN Yao-Bo,HU Xiao-Dong,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2008
GaN-based laser diodes (LDs) with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition (MOCVD).Electroluminescence spe...
[期刊论文] 作者：Du Yan-Hao,Wu Jie-Jun,Luo Wei-Ke,John Goldsmith,Han Tong,Tao Yue-Bin,Yang Zhi-Jian,Yu Tong-Jun,Zhang,
来源：中国物理B（英文版） 年份：2011
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,A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium
[期刊论文] 作者：HU Wei-Guo,LIU Xiang-Lin,ZHANG Pan-Feng,ZHAO Feng-Ai,JIAO Chun-Mei,WEI Hong-Yuan,ZHANG Ri-Qing,WU Jie-Jun,
来源：中国物理快报（英文版） 年份：2007
Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution...
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