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[期刊论文] 作者：LI Wen-wu,WANG Li-ya,
来源：上海交通大学学报（英文版） 年份：2004
Many MC companies find it necessary to cooperate with a large number of outsourcing suppliers to pro vide MC products according to customers diversified orders....
,A meshless scheme for partial differential equations based on multiquadric trigonometric B-spline q
[期刊论文] 作者：Gao Wen-Wu,Wang Zhi-Gang,
来源：中国物理B（英文版） 年份：2014
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,Standard-independent I/Q imbalance estimation and compensation scheme in OFDM direct-conversion tra
[期刊论文] 作者：Fang-lin GU,Shan WANG,Wen-wu WANG,
来源：信息与电子工程前沿（英文版） 年份：2018
Direct-conversion transceivers are gaining increasing attention due to their low power consumption. However, they suffer from a serious in- and quadrature-phase...
[期刊论文] 作者：Yong-Liang Li,Qiu-Xia Xu,Wen-Wu Wang,
来源：中国物理B（英文版） 年份：2018
The key technologies for the dual high-k and dual metal gate,such as the electrical optimization of metal insert poly-Si stack structure,the separating of high-...
,Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer depositi
[期刊论文] 作者：Xue-Li Ma,Hong Yang,Jin-Juan Xiang,Xiao-Lei Wang,Wen-Wu Wang,Jian-Qi Zhang,Hua-Xiang Yin,
来源：中国物理B（英文版） 年份：2017
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,Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of u
[期刊论文] 作者：Hao Xu,Hong Yang,Wei-Chun Luo,Ye-Feng Xu,Yan-Rong Wang,Bo Tang,Wen-Wu Wang,
来源：中国物理B（英文版） 年份：2016
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,Temperature-and voltage-dependent trap generation model in high-k metal gate MOS device with percol
[期刊论文] 作者：Hao Xu,Hong Yang,Yan-Rong Wang,Wen-Wu Wang,Wei-Chun Luo,Lu-Wei Qi,Jun-Feng Li,
来源：中国物理B（英文版） 年份：2016
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Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for
[期刊论文] 作者：Ren-Ren Xu,Qing-Zhu Zhang,Long-Da Zhou,Hong Yang,Tian-Yang Gai,Hua-Xiang Yin,Wen-Wu Wang,
来源：中国物理B（英文版） 年份：2022
A comprehensive study of the negative and positive bias temperature instability (NBTI/PBTI) of 3D FinFET devices with different small channel lengths is presented.It is found while with the channel lengths shrinking from 100 nm to 30 nm,bot......
High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin
[期刊论文] 作者：Ying Zan,Yong-Liang Li,Xiao-Hong Cheng,Zhi-Qian Zhao,Hao-Yan Liu,Zhen-Hua Hu,An-Yan Du,Wen-Wu Wang,
来源：中国物理B（英文版） 年份：
...
Insight into influence of thermodynamic coefficients on transient negative capacitance in Zr-doped H
[期刊论文] 作者：Yuan-Yuan Zhang,Xiao-Qing Sun,Jun-Shuai Chai,Hao Xu,Xue-Li Ma,Jin-Juan Xiang,Kai Han,Xiao-Lei Wang,Wen-Wu Wang,
来源：中国物理B（英文版） 年份：2021
We study the influence of the thermodynamic coefficients on transient negative capacitance for the Zr-doped HfO2(HZO) ferroelectric capacitors by the theoretical simulation based on the Landau-Khalatnikov (L-K) theory and experi-mental meas......
A Coin with Double sides? Phytophthora Essential Effector Avh238 has Dual Functions in Cell Death Ac
[会议论文] 作者：YANG Bo,WANG Qun-qing,JING Mao-feng,GUO Bao-dian,WANG Hao-nan,LI Hai-yang,WANG Yang,YE Wen-wu,WANG Yan,
来源：中国植物病理学会2016年学术年会 年份：2016
Phytophthora pathogens secrete effectors to manipulate host innate immunity and thereby to facilitate infection....
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