搜索筛选:
搜索耗时3.4375秒,为你在为你在102,285,761篇论文里面共找到 5 篇相符的论文内容
发布年度:
,High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Osci
[期刊论文] 作者：JIN Zhi,SU Yong-bo,CHENG Wei,LIU Xin-Yu,XU An-Huai,QI Ming,
来源：中国物理快报（英文版） 年份：2008
A four-finger InGaAs/InP double heterojunction bipolar transistor is designed and fabricated successfully by using planarization technology. The emitter area of...
[期刊论文] 作者：JIN Zhi,SU Yong-Bo,CHENG Wei,LIU Xin-Yu,XU An-Huai,QI Ming,
来源：中国物理快报（英文版） 年份：2008
We design and fabricate an InGaAs/InP double heterostructure bipolar transistor (DHBT). The spike of the conduction band discontinuity between InGaAs base and I...
[期刊论文] 作者：CHENG Wei,JIN Zhi,SU Yong-Bo,LIU Xin-Yu,XU An-Huai,QI Ming,
来源：中国物理快报（英文版） 年份：2009
To eliminate the conduction band spike at the base-collector interface,an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite...
[期刊论文] 作者：JIN Zhi,CHENG Wei,SU Yong-Bo,LIU Xin-Yu,XU An-Huai,QI Ming,
来源：中国物理快报（英文版） 年份：2009
...
,Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High
[期刊论文] 作者：ZHOU Shu-Xing,QI Ming,AI Li-Kun,XU An-Huai,WANG Li-Dan,DING Peng,JIN Zhi,
来源：中国物理快报（英文版） 年份：2015
...
相关搜索：
