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搜索耗时5.2215秒,为你在为你在102,285,761篇论文里面共找到 32 篇相符的论文内容
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Issues in the outburst prevention work of coal mines in Guizhou Province and the analysis of its cou
[期刊论文] 作者：LI Qing-song,LI Xiao-hua,MA Sh,
来源：煤炭学报：英文版 年份：2011
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Neural network-based computer-aided diagnosis in distinguishing malignant from benign solitary pulmo
[期刊论文] 作者：CHEN Hui,WANG Xiao-hua,MA Da-q,
来源：中华医学杂志（英文版） 年份：2004
Background Computer-aided diagnosis (CAD) of lung cancer is the subject of many current researches. Statistical methods and artificial neural networks have been...
Neural network-based computer-aided diagnosis in distinguishing malignant from benign solitary pulmo
[期刊论文] 作者：CHEN Hui,WANG Xiao-hua,MA Da-q,
来源：中华医学杂志（英文版） 年份：2007
Background Computer-aided diagnosis (CAD) of lung cancer is the subject of many current researches. Statistical methods and artificial neural networks have been...
[会议论文] 作者：Zhen-Liang Xu,Yi-Ting Ye,Xiao-Hua Ma,Ying Zhang,
来源：第八届分子印迹国际会议MIP2014 年份：2014
heophylline (THO) molecular imprinted composite membranes (MIM) were successfully fabricated by thermal initiated free radical polymerization on the surface...
Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistor
[期刊论文] 作者：Hao Zou,Lin-An Yang,Xiao-Hua Ma,Yue Hao,
来源：中国物理B（英文版） 年份：2021
The effects of various notch structures on direct current(DC)and radio frequency(RF)performances of AlGaN/GaN high electron mobility transistors(HEMTs)are analy...
,Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Burie
[期刊论文] 作者：Jun Luo,Sheng-Lei Zhao,Zhi-Yu Lin,Jin-Cheng Zhang,Xiao-Hua Ma,Yue Hao,
来源：中国物理快报（英文版） 年份：2016
...
[期刊论文] 作者：Miao Geng,Pei-Xian Li,Wei-Jun Luo,Peng-Peng Sun,Rong Zhang,Xiao-Hua Ma,
来源：中国物理B（英文版） 年份：2016
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Interon-gamma Enhances the Antitumor Effect of All-trans Retinoic Acid on Hepatocellular Carcinoma C
[期刊论文] 作者：YIN Yuan-qin,WANG Xiao-hua,MA Ping,FU Liye,HANG Tao,WANG Yang,
来源：中国癌症研究（英文版） 年份：2008
Objective:To explore the combination effects of all-trans retinoic acid(ATRA)with interferon-gamma(IFN-γ)on human hepatocarcinoma cell line SMMC-7721 and the m...
[会议论文] 作者：Ruo-biao Ma,Yan-bao Fu,Xiao-hua Ma,Yi-min Chen,Qian-yu Zhang,Dong-dong Jiang,
来源：第十四届国际锂电池会议(The 14th International meeting on lithium Batter 年份：2008
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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-
[期刊论文] 作者：Si-Qi Jing,Xiao-Hua Ma,Jie-Jie Zhu,Xin-Chuang Zhang,Si-Yu Liu,Qing Zhu,Yue Hao,
来源：中国物理B（英文版） 年份：2020
Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility tran-sistors (MOS-HEMTs) with post-etch surface treatme...
,Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility tra
[期刊论文] 作者：Ling Yang,Xiao-Wei Zhou,Xiao-Hua Ma,Ling Lv,Yan-Rong Cao,Jin-Cheng Zhang,Yue Hao,
来源：中国物理B（英文版） 年份：2017
...
[期刊论文] 作者：Feng Dai,Xue-Feng Zheng,Pei-Xian Li,Xiao-Hui Hou,Ying-Zhe Wang,Yan-Rong Cao,Xiao-Hua Ma,
来源：中国物理快报（英文版） 年份：2016
...
[期刊论文] 作者：Jun Luo,Sheng-Lei Zhao,Min-Han Mi,Wei-Wei Chen,Bin Hou,Jin-Cheng Zhang,Xiao-Hua Ma,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Wei Mao,Ju-Sheng Fan,Ming Du,Jin-Feng Zhang,Xue-Feng Zheng,Chong Wang,Xiao-Hua Ma,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Qing Zhu,Xiao-Hua Ma,Wei-Wei Chen,Bin Hou,Jie-Jie Zhu,Meng Zhang,Li-Xiang Chen,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Bo-Chao Zhao,Yang Lu,Wen-Zhe Han,Jia-Xin Zheng,Heng-Shuang Zhang,Pei-jun Ma,Xiao-Hua Ma,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Ma Xiao-Hua,Ma Ji-Gang,Yang Li-Yuan,He Qiang,Jiao Ying,Ma Ping,Hao Yue,
来源：中国物理B（英文版） 年份：2011
...
Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transisto
[期刊论文] 作者：Zheng-Zhao Lin,Ling Lü,Xue-Feng Zheng,Yan-Rong Cao,Pei-Pei Hu,Xin Fang,Xiao-Hua Ma,
来源：中国物理B（英文版） 年份：2022
AlGaN/GaN high electron mobility transistors(HEMTs)were irradiated with heavy ions at various fluences.After irradiation by 2.1 GeV181 Ta32+ions,the electrical characteristics of the devices significantly decreased.The threshold voltage shi......
Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 ga
[期刊论文] 作者：Yao-Peng Zhao,Chong Wang,Xue-Feng Zheng,Xiao-Hua Ma,Kai Liu,Ang Li,Yun-Long He,Yue Hao,
来源：中国物理B（英文版） 年份：2020
Two types of enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with different gate insulators are...
[期刊论文] 作者：Si-Qin-Gao-Wa Bao,Xiao-Hua Ma,Wei-Wei Chen,Ling Yang,Bin Hou,Qing Zhu,Jie-Jie Zhu,Yue Hao,
来源：中国物理B（英文版） 年份：2019
In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs) with an Al2O3 gate dielect...
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