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[期刊论文] 作者：Xiao-Nian Liu,Li-Hua Dai,Bing-Xu Ning,Shi-Chang Zou,
来源：中国物理快报（英文版） 年份：2017
The body current lowering effect of 130nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect trans...
,Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-I
[期刊论文] 作者：Meng-Ying Zhang,Zhi-Yuan Hu,Zheng-Xuan Zhang,Shuang Fan,Li-Hua Dai,Xiao-Nian Liu,Lei Song,
来源：中国物理快报（英文版） 年份：2017
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13 μm partially...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zhi-Yuan Hu,Xiao-Nian Liu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si...
,Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Inte
[期刊论文] 作者：Le-Qing Zhang,Jian Lu,Jia-Ling Xu,Xiao-Nian Liu,Li-Hua Dai,Yi-Ran Xu,Da-Wei Bi,Zheng-Xuan Zhang,
来源：中国物理快报（英文版） 年份：2017
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130hm CMOS bulk Si and silicon-on-insulator (SO1) tec...
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