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[期刊论文] 作者:Xiao-Nian Liu,Li-Hua Dai,Bing-Xu Ning,Shi-Chang Zou,
来源:中国物理快报(英文版) 年份:2017
The body current lowering effect of 130nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect trans...
,Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-I
[期刊论文] 作者:Meng-Ying Zhang,Zhi-Yuan Hu,Zheng-Xuan Zhang,Shuang Fan,Li-Hua Dai,Xiao-Nian Liu,Lei Song,
来源:中国物理快报(英文版) 年份:2017
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13 μm partially...
[期刊论文] 作者:Li-Hua Dai,Da-Wei Bi,Zhi-Yuan Hu,Xiao-Nian Liu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源:中国物理B(英文版) 年份:2018
Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si...
,Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Inte
[期刊论文] 作者:Le-Qing Zhang,Jian Lu,Jia-Ling Xu,Xiao-Nian Liu,Li-Hua Dai,Yi-Ran Xu,Da-Wei Bi,Zheng-Xuan Zhang,
来源:中国物理快报(英文版) 年份:2017
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130hm CMOS bulk Si and silicon-on-insulator (SO1) tec...
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