搜索筛选:
搜索耗时3.1364秒,为你在为你在102,285,761篇论文里面共找到 14 篇相符的论文内容
发布年度:
[期刊论文] 作者：WANG Xiao-quan YANG De-ren XI,
来源：半导体光子学与技术：英文版 年份：2002
The effect of hydrogen passivation on multicrystalline silicon (mc-Si) used for solar cells is described, and the mechanism of hydrogen diffusion and passivatio...
[期刊论文] 作者：WU Cheng-long,YANG De-ren,Que,
来源：城市道桥与防洪 年份：2003
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：Pi Xiao-Dong,Wang Rong,Yang De-Ren,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：NI Zhen-Yi,PI Xiao-Dong,YANG De-Ren,
来源：中国物理快报（英文版） 年份：2012
Hydrogen is omnipresent during the synthesis and processing of silicon nanocrystals (Si NCs).It is generally assumed that the incorporation of hydrogen leads to...
[期刊论文] 作者：LI Ming,MA Xiang-Yang,YANG De-Ren,
来源：中国物理快报(英文版) 年份：2008
By means of low-temperature(10K)Fourier transform infrared absorption spectroscopy,the kinetics of nitrogen indiffusion in Czochralski(CZ)silicon annealed 8t 11...
,Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General
[期刊论文] 作者：WU Shan-Shan,WANG Lei,YANG De-Ren,
来源：中国物理快报（英文版） 年份：2011
The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot, which contain deteriorated regions, is investigated.It is foun...
[期刊论文] 作者：LI Dong-Sheng,YANG De-Ren,E.Leoni,S.Binetti,S.Pizzini,
来源：中国物理快报（英文版） 年份：2004
We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, bu...
[期刊论文] 作者：WANG Xiao-quan,YANG De-ren,XI Zhen-qiang,Que Duan-lin,
来源：城市道桥与防洪 年份：2002
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：XU Xiao-Yan,MA Xiang-Yang,JIN Lu,YANG De-Ren,
来源：中国物理快报（英文版） 年份：2012
...
[期刊论文] 作者：Yao Jin-Lei,Wang Ru-Wu,Yang De-Ren,Yah Mi,Zhang Li-Gang,
来源：中国物理（英文版） 年份：2004
Magnetic transitions and magnetoresistance effect of the HfFe6Ge6-type Y0.9La0.1Mn6Sn6 compound have been investigated in the temperature range of 5-380K. The s...
,Oxygen Precipitation within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon
[期刊论文] 作者：CUI Can,YANG De-Ren,MA Xiang-Yang,FU Li-Ming,FAN Rui-Xin,QUE Duan-Lin,
来源：中国物理快报（英文版） 年份：2005
Oxygen precipitation within the magic denuded zone (MDZ) founded by rapid thermal processing in Czochralski silicon (CZ-Si) wafers is investigated. After the st...
[期刊论文] 作者：ZHU Xin,YANG De-Ren,LI Ming,CHEN Tao,WANG Lei,QUE Duan-Lin,
来源：中国物理快报(英文版) 年份：2008
The minority carrier lifetime of as-gown germanium-doped Czochralski(GCZ)silicon wafers doped with germanium concentrations[Ge]=1016-1018 cm-3 is investigated i...
[期刊论文] 作者：LIN Li-Xia,CHEN Jia-He,WU Peng,ZENG Yu-Heng,MA Xiang-Yang,YANG De-Ren,
来源：中国物理快报（英文版） 年份：2011
...
[期刊论文] 作者：GUO Chun-Lin,WANG Lei,ZHANG Yan-Rong,ZHOU Hai-Feng,LIANG Feng,YANG Zhen-Hui,YANG De-Ren,
来源：中国物理快报（英文版） 年份：2014
...
相关搜索：
