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[期刊论文] 作者：Xu Mao,Yingxia Jin,Zhenlai Zho,
来源：稀有金属材料与工程 年份：2006
The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure.The growth temperature of films was 100℃,250℃,40...
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