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[期刊论文] 作者：LU Min(陆敏),CHANG Xin(常昕),LI Zi-Lan(黎子兰),YANG Zhi-Jian(杨志坚),ZHANG Guo-Yi(张国义),ZHANG Bei(章蓓),
来源：中国物理快报（英文版） 年份：2003
High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and th...
,Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitti
[期刊论文] 作者：YANG Zhi-Jian(杨志坚),QIN Zhi-Xin(秦志新),TONG Yu-Zhen(童玉珍),YU Tong-Jun(于彤军),LU Shu(陆曙),YANG Hua(杨华),ZHANG Guo-Yi(张国义,
来源：中国物理快报（英文版） 年份：2003
The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW)structure were grown by low-pressure metalorganic vapour phas...
,Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of In
[期刊论文] 作者：LI Zhong-Hui(李忠辉),YU Tong-Jun(于彤军),YANG Zhi-Jian(杨志坚),TONG Yu-Zhen(童玉珍),ZHANG Guo-Yi(张国义),FENG Yu-Chun,
来源：中国物理快报（英文版） 年份：2004
An InGaN multiple-quantum-well (MQW) violet-light-emitting diode (LED) is grown by low-pressure metalorganic chemical vapour deposition. It is found that photol...
[期刊论文] 作者：YANG Zhi-Jian(杨志坚),LI Zhong-Hui(李忠辉),REN Qian(任谦),JIN Chun-Lai(金春来),LU Shu(陆曙),ZHANG Bei(章蓓),ZHANG Guo-Yi(张国义,
来源：中国物理快报（英文版） 年份：2003
The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray diffraction and photolumines...
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