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[期刊论文] 作者：Wang Jian-Xia,Wang Lian-Shan,Yang Shao-Yan,Li Hui-Jie,Zhao Gui-Juan,Zhang Heng,Wei Hong-Yuan,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：ZHAO Gui-Juan,YANG Shao-Yan,LIU Gui-Peng,LIU Chang-Bo,SANG Ling,GU Cheng-Yan,LIU Xiang-Lin,
来源：中国物理快报（英文版） 年份：2013
By using x-ray diffraction analysis,we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane InxGa1-xN thin...
[期刊论文] 作者：ZHAO Gui-Juan,LI Zhi-Wei,WEI Hong-Yuan,LIU Gui-Peng,LIU Xiang-Lin,YANG Shao-Yan,ZHU Qin-Sheng,WANG Zhan-Guo,
来源：中国物理快报（英文版） 年份：2012
The non-polar a-plane (1120) InxGa1-xN alloys with different indium compositions (0.074 ≤ x ≤ 0.555) were grown on r-plane (10(1)2) sapphire substrates by met...
[期刊论文] 作者：SANG Ling,LIU Jian-Ming,XU Xiao-Qing,WANG Jun,ZHAO Gui-Juan,LIU Chang-Bo,GU Cheng-Yan,LIU Gui-Peng,WEI,
来源：中国物理快报（英文版） 年份：2012
The morphological evolution of a-GaN deposited by metalorganic chemical vapor deposition (MOCVD) on rsapphire is studied.The influences of Ⅴ/Ⅲ ratio and growt...
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