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[期刊论文] 作者:ZHAO Xiang-Fu,HAN Ping,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2011
After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two...
[期刊论文] 作者:SHEN Bo,SHI Hong-Tao,ZHANG Rong,CHEN Zhi-Zhong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2001
Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes were inves tigated. Measurement of the forward bias current-v...
[期刊论文] 作者:LIU Fei,YANG Sen,ZHOU Dong,LU Hai,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2015
[期刊论文] 作者:Jiang Chao,Lu Hai,Chen Dun-Jun,Ren Fang-Fang,Zhang Rong,Zheng You-Dou, 来源:中国物理B(英文版) 年份:2014
[期刊论文] 作者:CAO Dong-Sheng,LU Hai,CHEN Dun-Jun,HAN Ping,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2011
[期刊论文] 作者:HUANG Xiao-Ming,WU Chen-Fei,LU Hai,XU Qing-Yu,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2012
The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress.W...
[期刊论文] 作者:DU Xiao-Zhang,LU Hai,CHEN Dun-Jun,XIU Xiang-Qian,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2010
[期刊论文] 作者:WANG Xiao-Feng,SHAO Zhen-Guang,CHEN Dun-Jun,LU Hai,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2014
We fabricate two Ni/Au-Ino.17 Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si,respectively,and investigate their forward-bias current transport...
[期刊论文] 作者:YU Guang,WU Chen-Fei,LU Hai,REN Fang-Fang,ZHANG Rong,ZHENG You-Dou,HUANG Xiao-Ming, 来源:中国物理快报(英文版) 年份:2015
[期刊论文] 作者:LIU Fei,ZHOU Dong,LU Hai,CHEN Dun-Jun,REN Fang-Fang,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2015
[期刊论文] 作者:Wang Tian-Jiao,Xu Wei-Zong,Lu Hai,Ren Fang-Fang,Chen Dun-Jun,Zhang Rong,Zheng You-Dou, 来源:中国物理B(英文版) 年份:2014
[期刊论文] 作者:Jiang Rong,Lu Hai,Chen Dun-Jun,Ren Fang-Fang,Yan Da-Wei,Zhang Rong,Zheng You-Dou, 来源:中国物理B(英文版) 年份:2013
[期刊论文] 作者:Fu Li-Hua,Lu Hai,Chen Dun-Jun,Zhang Rong,Zheng You-Dou,Wei Ke,Liu Xin-Yu, 来源:中国物理B(英文版) 年份:2012
[期刊论文] 作者:ZHOU Dong,LU Hai,CHEN Dun-Jun,REN Fang-Fang,ZHANG Rong,ZHENG You-Dou,LI Liang, 来源:中国物理快报(英文版) 年份:2013
Al0.5Ga0.5N-based metal-semiconductor-metal photodetectors (PDs) with a large device area of 5 × 5 mm2 are fabricated on a sapphire substrate,which are tested...
[期刊论文] 作者:LIAN Hai-Feng,WANG Guo-Sheng,LU Hai,REN Fang-Fang,CHEN Dun-Jun,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2013
GaN-based semiconductors are very attractive for fabricating highly sensitive ultraviolet (UV) photodetectors (PDs) owing to their wide direct bandgap,excellent...
[期刊论文] 作者:WANG Guo-Sheng,LU Hai,XIE Feng,CHEN Dun-Jun,REN Fang-Fang,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2012
AlGaN-based back-illuminated solar-blind ultraviolet (UV) p-i-n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates.To impro...
[期刊论文] 作者:CUI Xu-Gao,ZHANG Rong,TAO Zhi-Kuo,LI Xin,XIU Xiang-Qian,XIE Zi-Li,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2009
Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD).Microstructural properties of films are investigated using Raman sca...
[期刊论文] 作者:XUE Jun-,CHEN Dun-Jun,LIU Bin,XIE Zi-Li,JIANG Ruo-Lian,ZHANG Rong,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2009
[期刊论文] 作者:ZHAO Chuan-Zhen,ZHANG Rong,LIU Bin,LI Ming,XIE Zi-Li,XIU Xiang-Qian,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2010
[期刊论文] 作者:ZHAO Chuan-Zhen,ZHANG Rong,LIU Bin,LI Ming,XIU Xiang-Qian,XIE Zi-Li,ZHENG You-Dou, 来源:中国物理快报(英文版) 年份:2013
Based on modification of the simplified coherent potential approximation,a model for the band-gap energy of Inx GayAl1-x-yN is developed.The parameters of the m...
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