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,Effect of defects properties on InP-based high electron mobility transistors
[期刊论文] 作者：Shu-Xiang Sun,Ming-Ming Chang,Meng-Ke Li,Liu-Hong Ma,Ying-Hui Zhong,Yu-Xiao Li,Peng Ding,Zhi Jin,Zhi-Chao Wei, 来源：中国物理B（英文版） 年份：2019
The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through...
,Effects of proton irradiation at different incident angles on InAlAs/InGaAs InP-based HEMTs
[期刊论文] 作者：Shu-Xiang Sun,Zhi-Chao Wei,Peng-Hui Xia,Wen-Bin Wang,Zhi-Yong Duan,Yu-Xiao Li,Ying-Hui Zhong,Peng Ding, 来源：中国物理B（英文版） 年份：2018
InP-based high electron mobility transistors (HEMTs) will be affected by protons from different directions in space radiation applications.The proton irradiatio...
,Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane
[期刊论文] 作者：Zhong,Bo Yang,Ming-Ming Chang,Peng Ding,Liu-Hong Ma,Meng-Ke Li,Zhi-Yong Duan,Jie Yang,Zhi Jin,Zhi-Chao Wei, 来源：中国物理B（英文版） 年份：2020
An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si...
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