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[会议论文] 作者：Zhilai Fang,
来源：第13届全国发光学学术会议 年份：2013
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[会议论文] 作者：Zhengyuan Wu,Xiyang Shen,Kongyi Li,Chuan Liu,Junyong Kang,Zhilai Fang,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
In situ asymmetric island sidewall growth(AISG)was developed to improve the crystalline quality of the(11-22)GaN films on m-sapphire.By AISG the Ga-face facet growth along the +c [0001] inclined direc...
Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatme
[会议论文] 作者：Zhengyuan Wu,Xiyang Shen,Huan Xiong,Qingfei Li,Junyong Kang,Zhilai Fang,Feng Lin,Bilan Yang,Shilin Lin,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
By Mg pretreatment of the bottom GaN barrier surface,the growth behavior of the high indium content InGaN/GaN quantum wells(QWs)changed greatly;the interface quality and luminescence capability were s...
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