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[期刊论文] 作者：Zhang Chonghong,Song Yin,Sun Y,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2008
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[期刊论文] 作者：Gou Jie,Zhang Chonghong,Ma Yiz,
来源：中国科学院近代物理研究所和兰州重离子研究装置年报：英文版 年份：2013
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[期刊论文] 作者：Gou Jie,Zhang Chonghong,Song Y,
来源：中国科学院近代物理研究所和兰州重离子研究装置年报：英文版 年份：2014
In the present work, the LED chip was irradiated by using 59.6 MeV N ions in a terminal chamber of theSector-focused cyclotron (SFC) in the National Labortary o...
[期刊论文] 作者：Song Yin Zhang Chonghong Yao C,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2009
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[期刊论文] 作者：Gou Jie,Zhang Chonghong,Song Y,
来源：中国科学院近代物理研究所和兰州重离子研究装置年报：英文版 年份：2015
The lifetime of light-emitting diodes (LED) becomes a more important concern because of the increasing application of LED in the field of traffic light, solid-s...
[期刊论文] 作者：Song Yin Zhang Chonghong Li Ji,
来源：中国科学院近代物理研究所和兰州重离子研究装置年报：英文版 年份：2011
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[期刊论文] 作者：Zhang Chonghong,Song Yin,Sun Y,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2004
Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelec...
[期刊论文] 作者：Zhang Chonghong,Song Yin,T. Sh,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2005
Chlorine-implantation of silicon has a number of applications, for example, possible effects due to introduction of chlorine by plasma etching of silicon wa...
[期刊论文] 作者：Zhang Chonghong Han luhui Li B,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2009
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[期刊论文] 作者：SONG Yin,ZHANG ChongHong,HE De,
来源：中国科学：物理学、力学、天文学英文版 年份：2012
在现在的工作，单个水晶蓝宝石(Al2O3 ) 的光致发光(PL ) 特性由 110 keV 有或没有培植取样他或由 230 兆电子伏 Pb 离子的照耀，以及随后在 600， 900 和 1100 K (T A ) 退火被学...
[期刊论文] 作者：孟彦成,Zhang Chonghong,Ma Tongda,Fu Xin,,
来源：IMP & HIRFL Annual Report 年份：2012
Specimens were implanted with 5.0MeV84 Kr19+ions,to successively increase fluences of 5×1013,2×1014,1×1015ions/cm2 at room temperature in the 320keV High-vol...
[期刊论文] 作者：宋银,Zhang Chonghong,Yang Yitao,Men Yancheng,Gou Jie,,
来源：IMP & HIRFL Annual Report 年份：2012
AlN thin film irradiated with 100MeV U ions using the HIRFL-SFC(Heavy Ion Research Facility in Lanzhou)facility in Lanzhou were investigated by Infrared spectra...
[期刊论文] 作者：缑洁,Zhang Chonghong,Zhang Liqing,Song Yin,Wang Lanxi,Yang Yitao,Li Jianjian,Meng Yancheng,,
来源：IMP & HIRFL Annual Report 年份：2012
GaN-related materials and devices have the extensively application potential in the irradiated environments.It’s extremely important to understand the ion irra...
[期刊论文] 作者：杨义涛,Zhang Chonghong,Song Yin,Gou Jie,Zhang Liqing,Meng Yancheng,Zhang Hengqing,Ma Yizhun,,
来源：IMP & HIRFL Annual Report 年份：2012
The swift heavy ions(SHI)irradiation using a tool for the ion-beam-shaping technique has attracted much attention in recently years,which can transform spherica...
[期刊论文] 作者：张丽卿,Zhang Chonghong,Gou Jie,Yang Yitao,Song Yin,Li Jianjian,Meng Yancheng,Ma Yizhun,Zhang Hengqing,,
来源：IMP & HIRFL Annual Report 年份：2012
GaN-based materials have a great potential used in high-temperature,high-power and high frequency electronic devices such as transistors,solid-state light sourc...
[期刊论文] 作者：张丽卿,Zhang Chonghong,Gou Jie,Yang Yitao,Song Yin,Li Jianjian,Meng Yancheng,Ma Yizhun,Zhang Hengqing,,
来源：IMP & HIRFL Annual Report 年份：2012
While a HCI impact on solid surface,the high density of electronic excitation produced by potential energy release of HCI is comparable to that produced by high...
[期刊论文] 作者：缑洁,Zhang Chonghong,Zhang Liqing,Song Yin,Wang Lanxi,Li Haixia,Li Jianjian,Meng Yancheng,Ma Yizhun,Zhang,
来源：IMP & HIRFL Annual Report 年份：2012
In the present work,the I-V and C-V characteristics at variable temperatures are showed in this paper.An Au/GaN schottky junction was fabricated on the GaN epi-...
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