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[期刊论文] 作者:揭斌斌,薩支唐,,
来源:半导体学报 年份:2011
The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is derived for MOS capacitors by the charge-storage method.Fermi-Dir...
MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from
[期刊论文] 作者:揭斌斌,薩支唐,,
来源:半导体学报 年份:2011
Low-frequency and high-frequency Capacitance-Voltage(C-V) curves of Metal-Oxide-Semiconductor Capacitors(MOSC),including electron and hole trapping at the dopan...
[期刊论文] 作者:揭斌斌,薩支唐,,
来源:半导体学报 年份:2011
Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping...
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