搜索筛选:
搜索耗时1.0600秒,为你在为你在102,285,761篇论文里面共找到 3 篇相符的论文内容
发布年度:
[期刊论文] 作者：揭斌斌,薩支唐,,
来源：半导体学报 年份：2011
The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is derived for MOS capacitors by the charge-storage method.Fermi-Dir...
MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from
[期刊论文] 作者：揭斌斌,薩支唐,,
来源：半导体学报 年份：2011
Low-frequency and high-frequency Capacitance-Voltage(C-V) curves of Metal-Oxide-Semiconductor Capacitors(MOSC),including electron and hole trapping at the dopan...
[期刊论文] 作者：揭斌斌,薩支唐,,
来源：半导体学报 年份：2011
Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping...
相关搜索：
