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[期刊论文] 作者:Li Zongzhen,Liu Jie,Zhai Pengf, 来源:中国科学院近代物理研究所和兰州重离子研究装置年报:英文版 年份:2019
Amorphous HfO2 is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the p...
[期刊论文] 作者:Hu Peipei,Liu Jie,Zhai Pengfei, 来源:中国科学院近代物理研究所和兰州重离子研究装置年报:英文版 年份:2019
GaN single crystals were irradiated by 129Xe and 209Bi ions in the range of 800~2300 MeV,respectively.The samples were studied by transmission and high-resoluti...
[期刊论文] 作者:Ai Wensi,Liu Jie,Zhai Pengfei,, 来源:中国科学院近代物理研究所和兰州重离子研究装置年报:英文版 年份:2019
β-Ga2O3 has received extensive attention as power electronics and UV optoelectronics because of its ultra-wide band gap, excellent chemical and thermal stabili...
[期刊论文] 作者:Liu Li,Liu Jie,Zhai Pengfei,Zh, 来源:中国科学院近代物理研究所和兰州重离子研究装置年报:英文版 年份:2019
SHI irradiation method may be another method except in-situ growth techniques to generate one-dimensional defects in YBCO(YBa2Cu3Oτ-x)films and has already bee...
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