IGBTs相关论文
<正>The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the d......
<正>The insulated gate bipolar transistor(IGBT) was invented in early 80s as the controlled switch to replace HV MOSFETs......
<正>Power semiconductor devices are the key technology driver for all power electronic system engineering.The main devel......
本文列出了额定电压为1800V电流为400A和1400A的一种新型高可靠性无焊压装IGBTs的电气和热特性并把无焊压装器件的特性和相当定额......
Multilevel inverters are used in many industrial applications because of good power quality, minimum losses and less har......
为解决由栅极驱动信号不同步引起的多个IGBT串联电压不均衡问题,以实现串联IGBT在大功率高电压场合中的应用,笔者采用基于栅极端电......
