Strained-S相关论文
生长在弛豫SiGe层上的Si产生张应变,使载流子的迁移率显著提高,因此应变SiPMOSTET可以得到非常好的性能。在讨论分析了应变SiPMOSF......
In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with num......