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A two-stage differential linear power amplifier(PA) fabricated by 0.18μm CMOS technology is presented. An output matchi......
A novel advanced soft punch through(SPT) IGBT signed as SPTC-IGBT is investigated.Static and dynamic characteristics are......
Effect of growth-interrupted method on quality of AlGaAs/GaAs multiple quantum wells prepared by MBE
AlGaAs/GaAs multi-quantum well (MQW) was prepared by molecular beam epitaxy(MBE) with growth-interrupted heterointerface......
A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency appli......
Silicon drift detector(SDD) is used in the soft x-ray pulse height analyzer(PHA) to measure soft x-ray emissions in fusi......
Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded so
A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By intr......
石墨烯是一种新型二维碳材料,其特殊的晶格结构以及碳元素本身的性质使其在电、热、光、力学等方面都拥有优异的性能,在电气领域的......
介绍了西德MAT公司F—MAT251同位素固体质谱仪离子源加速器高压电源中分压电阻棒的制作工艺和高压逆变器用逆变晶体管的代换的两个......
Three_dimensional integrated circuit technology with transistors stacked on top of one another in multi-layer silicon fi......
Ultra-low power transceiver design is proposed for wireless sensor node used in the wireless sensor network(WSN).Typical......
