【摘 要】
：
The TFTs with atomic layer deposited ZnO-channe1/Al2O3-dielectric were fabricated under the maximum process temperature of 200 ℃.We compared the influences of annealing temperature and time on the dev
【机 构】
：
State Key Laboratory of ASIC and System, School of Microelectronics,Fudan University, Shanghai 20043
【出 处】
：
2016年上海市研究生学术论坛——电子科学与技术
论文部分内容阅读
The TFTs with atomic layer deposited ZnO-channe1/Al2O3-dielectric were fabricated under the maximum process temperature of 200 ℃.We compared the influences of annealing temperature and time on the device performance.Excellent electrical characteristics of the TFTs were demonstrated after O2 annealing at 200 ℃ for 35 mins.
其他文献
本文介绍了一种矩形波导宽边八元中心斜缝天线,并简要阐述了宽边斜缝阵列天线的理论依据和设计原则.结合谐振腔理论,利用算得的参数,借助Ansoft HFSS软件对天线进行仿真分析,通过参数优化使天线达到性能要求,且在微波解冻中得到应用.
本文介绍了一种5阶切比雪夫跨导电容(OTA-C)低通滤波器,用于接收机的模拟基带链路中.该电路采用TSMC65nm工艺,仿真结果表明该电路可实现1.5GHz的信号带宽及0-40dB可变增益,其中最大gain-step小于1dB.在0dB下的OIP3为1.4dBm,噪声系数27-30dB.在1.2V电压下功耗11mw.电路核心面积0.5mm2.
本文研究了差分激励的圆形贴片微带天线特性.腔模理论模型被扩展分析差分激励下的阻抗特性,对比HFSS仿真结果,说明扩展模型的正确性.基于HFSS仿真,比较了差分和单端激励下圆形贴片微带天线的反射,阻抗和辐射特性.比较可知,差分阻抗是单端下的阻抗的四倍,差分天线消除了TM21等模式影响,并从理论上给出了解释,因而有更纯辐射极化特性.
在集成电路工艺中,钼是新型铜互连扩散阻挡层的选择之一.已经发现甘氨酸对钼在碱性双氧水中的腐蚀有抑制作用.本文研究了在碱性双氧水中甘氨酸对钼的电化学行为的影响,并通过拉曼光谱、X射线光电子能谱(XPS)和扫描电子显微镜(SEM)对样品进行了表面分析.开路电位(OCP)、恒电位曲线等电化学实验结果与表面分析结果相吻合.结果表明甘氨酸促进了MoO3的溶解,使得氧化层中Mo2O5增多,进而抑制Mo的腐蚀并
近年来,数模转换器的市场呈稳步上升的发展趋势.本文基于R-2R电阻网络的基本结构,设计了一种12位的高精度数模转换器,其采用温度计译码的方法对数模转换器的高位输入进行译码,并内置一种复位时间可调整的片上复位电路.所设计的数模转换器具有结构简单、面积小、功耗低等优点,适用于高密度布局电路及便携式设备和工业控制等方面.
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with an atomic-layer-deposited (ALD) SiO2 gate insulator were fabricated and compared with those with a plasma-enhanced chemical vapor deposi
This report presents a 0.18-um 2.4GHz CMOS LNA linearized using active post-distortion (APD).The differential architecture is chosen to provide sufficient common mode rejection ratio.The brief theory
Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C 10H16 (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition anneal
In this paper, the impacts of ionizing radiation on the gate induced floating body effects (GIFEBs) and low-frequency (LF) noise for the 130nm partially depleted silicon-on-insulator (PDSOI) N-type me
The resonant tunneling photodiodes (RTDs) based on an A1GaAs/GaAs double barrier structure with an InGaAs absorption layer have simulated.Photons with the wavelength λ=1.54 μm lead to hole accumulatio