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5. An analysis of E×B drift movement in the SH4 plasmas included negatively charged nanoparticles

An analysis of E×B drift movement in the SH4 plasmas included negatively charged nanoparticles

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：huangyi101

【摘 要】

：

The negatively charged nanoparticles are generated for prepare the silicon thin films in the SH4 plasma.It has been recognized that the nanoparticles contamination is a major problem in plasma process

【作 者】

：

J-H Lee S-C Yang 

【机 构】

：

Electrical Engineering, Chonbuk National University, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

silicon nanoparticles negatively charged ion E×B drift 

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The negatively charged nanoparticles are generated for prepare the silicon thin films in the SH4 plasma.It has been recognized that the nanoparticles contamination is a major problem in plasma processing such as etching,sputtering and chemical vapor deposition applications of silicon thin film.

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