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MoO3的饱和蒸气压较高 ,可以直接用热反应蒸发法制备In2 O3∶Mo(IMO)透明导电薄膜。XPS和XRD测试结果证明 ,IMO薄膜中的Mo是以Mo6+ 离子形式取代了In2 O3 晶格中的In3+ 离子而存在的 ,没有形成新的化合物 ,也没有改变In2 O3 的体心立方晶格结构。在不进行退火、放电等工艺处理的情况下 ,用常规的反应蒸发法 ,在约 35 0℃ ,1 2mm厚的载玻片上制备的IMO薄膜在可见光区域的平均透射比 (含玻璃基底 )可超过 0 80 ,同时电阻率可以低至 1 7× 10 -4 Ωcm。
MoO3 saturated vapor pressure is higher, you can directly use thermal reaction evaporation method In2 O3: Mo (IMO) transparent conductive film. The results of XPS and XRD show that the Mo in the IMO film exists as the substitution of In3 + ions in the In2 O3 lattice in the form of Mo6 + ions, no new compounds are formed and the body-centered cubic lattice structure of In2 O3 is not changed. The average transmittance (including glass substrate) in the visible region of an IMO film prepared on a glass slide having a thickness of 12 mm at a temperature of about 350 ° C by a conventional reaction evaporation method without performing a process such as annealing and discharge may be Above 0 80, resistivity can be as low as 1 7 × 10 -4 Ωcm.