Owing to potential application in the field of spintronics, Diluted Magnetic Semiconductors (DMS) have attracted much interest.Limited by the chemical solubility, traditional Ⅲ-Ⅴ based DMS systems, such as (Ga,Mn)As, are chemically metastable, and are available only as thin films.Therefore, the bulk DMS materials are highly required to obtain more reliable results.Available of bulk crystalline specimens make it possible for μSR, NMR and even neutron scattering.Recently, Ⅰ-Ⅱ-Ⅴ based Li(Zn,Mn)As was theoretically proposed and experimentally synthesized as a bulk DMS material with Curie temperature (Tc) of 50 K.Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x =0, 0.025, 0.05, 0.075 and 0.1) with tetragonal ZrCuSiAs (1111) structure.As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS.The Curie temperature (Tc) is around 200 K as x ≥ 0.05, which is among the highest Tc record of known bulk DMS materials up to now.The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.