The interest in transparent electronic technologies surrounds many urgent optoelectronic device applications. The key components of plasmonic materials of conventional semiconductors are wide band gap of oxide thin films. Although the transparent electronics materials for visible and near-infrared wavelength have been developed, the mid-infrared and far-infrared spectrum remains difficulty that has no known system can achieve the requirement. The system of Mg-C-O-H films, we selected, is the first non-oxide type transparent electronic material. In particular, Mg-C-O-H films, which have the Mg hydroxide structure, were generated by Mgx-Cy films after reaction with water vapor, and Mgx-Cy films were deposited by magnetron sputtering. Based on the x-ray diffraction, x-ray photoelectron spectroscopy, hell effect measurement system, atomic force microscope, Fourier Transform Infrared Spectrometer, and UV photoelectron spectroscopy results, Mg-C-O-H films have outstanding infrared optical and electrical properties. As the extrinsic defect of Mg-C-O-H films, C replaced the position of H atoms and contributed the free electron, making conductivity values approximately 3.5×10-2Ωcm. With two-step method, here, we demonstrate an excellent optical property in mg-C-O-H, that is achieved through forming weak bond-energy, allowing plasma wavelength values around 10μm for infrared tran mittance above 72%. Changing the contents of C atomic of Mg-C-O-H films, the visible light tran mittance was larger than 80%, the optical bandgap was about 4.04~6.87 eV, and shifted towards the blue region due to the Moss-Burstein (M-B) effect. In this paper, the effects of sputtering power, substrate temperature, and after treatment technology on film properties were systematically studied.