Recently,transparent amorphous oxide semiconductors such as Ga-In-Zn-O (a-GIZO),In-Sn-O (ITO),Zn-O (ZnO),In-Ga-O (IGO) are expected for channel materials in liquid crystal displays because its high fi
In the display industry,transition metal oxide (TMO) materials have been reported as promising candidates replacing a-Si:H and poly-Si semiconductor due to the advantages of a low-cost low-temperature
Development of the flexible materials with optical transparency,mechanical stability,light weight,low-cost farbication,and electrical stability is required for the application of the flexible and stre
Organic and printed electronics,such as OLED display and lighting,organic photovoltaic,and printed RFID,all require hermetical sealing to obtain good device lifetime.
A novel room temperature deposition process for silicon oxide (SiOx) thin films was developed using neutral beam assisted high density inductive coupled plasma(NBaICP) chemical vapor deposition (CVD)
Organic light-emitting devices (OLEDs) with an n-type bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layer (ETL) were fabricated to
White organic light-emitting devices (WOLEDs) were fabricated utilizing a porous poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenevinylene) (MEH-PPV) polymer layer and a 2-methyl-9,10-di(2-naphthyl)anthra
We investigated the transfer characteristics and electrical performance parameters of soluble zinc tin oxide thin film transistors (ZTO TFTs) when the channel layer exposed to ambient air,nitrogen,oxy
Waste treatment process using thermal plasmas has attracted the most attention because thermal plasmas can offer distinct advantages,such as a high enthalpy,which increases reaction rate,oxidation or