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5. Organic light-emitting devices with an n-type bis(ethylenedithio)-tetrathiafulvalene-doped 4,7-diphe

Organic light-emitting devices with an n-type bis(ethylenedithio)-tetrathiafulvalene-doped 4,7-diphe

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：xtcwang

【摘 要】

：

Organic light-emitting devices (OLEDs) with an n-type bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layer (ETL) were fabricated to

【作 者】

：

K. S. Lee D. H. Kim D. U. Lee T. W. Kim 

【机 构】

：

Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Organic light-emitting devices hole transport layer operating voltage electrolum 

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论文部分内容阅读

Organic light-emitting devices (OLEDs) with an n-type bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) electron transport layer (ETL) were fabricated to investigate on the air stable n-type organic compounds to enhance the luminance efficiency.

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