Owning to its sharp metal-insulator transition (MIT) at ~67 ℃ accompanied by several orders of magnitude changes in electrical resistance and ultra-fast increase in infrared transmittance, VO2 is becoming anattractive candidate for the next electrical and optical material.Here we report the fabrication and characterization of VO2 thin film obtained from the V2O5 thin film annealed in At/H2 ambience.V2O5 thin film was fabricated by using the pulsed laser deposition (PLD) system on the R-sapphire substrate under several different conditions by varying the substrate temperature and the pressure of the growth atmosphere to optimized the growth condition.Then we carried out the annealing treatment on the V2O5 thin film in the Ar/H2 (95%Ar, 5%H2) ambience for 1, 3, and 4.5 hours at 450℃.500℃, 525℃and 550 ℃.Atomic force microscopy (AFM) analysis revealed that the grain size was aggrandized greatly after annealing.