GaN on silicon technology combines the low cost and ease of manufacturing associated with large diameter Si substrates and the demonstrated high power density and efficiency offered by AlGaN/GaN devices.It is the best candidate that can help the base station RF power amplifier to overcome current design challenges.On the other hand,the Doherty amplifier,is a simple efficiencyenhancement PA architecture that provides high efficiency and inherent linearity at back-off operation.This paper shows the combination of lasted GaN on silicon technology and advanced 3-way Doherty power amplifier topologies.In this paper,a highefficiency 1805-1880MHz 3-way GaN on Silicon Doherty amplifier for Base station is presented.It is implemented by MACOMs MAGb-101822-170B0P combined with MACOMs MAGb-101822-360S0P Gen 4 GaN on silicon devices.61%modulated signal efficiency was achieved at 49 dBm average output power,while the peak power is larger than 56.2 dBm over the whole band.With good linearity of GaN on Silicon devices,the 1-Carrier 20MHz LTE ACPR can be lower than-60 dBc after DPD correction.