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5. Negative thermal photoluminescence quenching of defect-related transitions in InP1-xBix (x =0.019 an

Negative thermal photoluminescence quenching of defect-related transitions in InP1-xBix (x =0.019 an

来源 :第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain | 被引量 : 0次 | 上传用户：zhaoguopu

【作 者】

：

Xiren Chen Xiaoyan Wu Liangqing Zhu Shumin Wang Jun Shao 

【机 构】

：

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, CAS,Shanghai, Chi

【出 处】

：

第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain

【发表日期】

：

2016年11期

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