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5. Plasma enhanced atomic layer deposition of Co glue layer using CCTBA precursor

Plasma enhanced atomic layer deposition of Co glue layer using CCTBA precursor

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：liuleizishen

【摘 要】

：

Cu-based interconnects continue to be used in ultra large integrated circuits (ULSI) due to its low resistivity and improved electromigration (EM) resistance.

【作 者】

：

Dae-Yong Moon Jae-Yong Park Sae-Yong Shin Jong-Wan Park 

【机 构】

：

Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Plasma enhanced atomic layer deposition Cobalt Co interconnect glue layer 

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Cu-based interconnects continue to be used in ultra large integrated circuits (ULSI) due to its low resistivity and improved electromigration (EM) resistance.

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