2. 您的位置
3. 首页
4. 会议论文
5. Low Plasma Induced Damaged Neutral Beam Etching of Metal Gate in Metal Gate/High-k Dielectric CMOSFE

Low Plasma Induced Damaged Neutral Beam Etching of Metal Gate in Metal Gate/High-k Dielectric CMOSFE

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：babyjl1219

【摘 要】

：

As the critical dimension (CD) of the metal-oxide-semiconductor field effect transistor (MOSFET) is scaled down to 45nm node and below,the compatibility of the present gate (poly-Si) with high-k diele

【作 者】

：

K. S. Min J. S. Oh C. K. Kim G. Y. Yeom 

【机 构】

：

Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon,Kyunggi-do,

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Neutral beam etching Metal gate High- k dielectric CMOSFETs 

下载到本地 , 更方便阅读

下载此文 赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

As the critical dimension (CD) of the metal-oxide-semiconductor field effect transistor (MOSFET) is scaled down to 45nm node and below,the compatibility of the present gate (poly-Si) with high-k dielectric is intrinsically limited.Therefore,a metal gate,as an alternative to poly-Si has been considered.

其他文献

Structural analysis of vertically-aligned single crystalline ZnO nanowire arrays grown on different

One-dimensional (1D) nanostructures such as nanowires and nanotubes have attracted great interest for the past decade because of their specific physical properties.

会议

ZnO NanorodsICPS methodHydrothermal growth

Intercalation of Two-dimensional Materials with Alkali Salts

The superb electronic and mechanical property of two dimensional (2D) materials with atomic thickness promise the potential applications to flexible electronics and low weight composites.

会议

GrapheneBoron NitrideMolybdenum DisulfideIntercalation

Synthesis of In2O3 Nanostructure via Plasma Enhanced Chemical Vapor Deposition

Plasma enhanced chemical vapor deposition method is widely used in synthesizing nanoparticles,nanotubes,nanowires and other nanostructures.

会议

Oxygen PlasmaNanoblades StructureOptical Emission Spectra

Preparation of TiO2 films by atmospheric radio frequency dielectric barrier discharge

Titanium oxide (TiO2) has been widely used in variety of applications including photocatalysis,photovoltaics and self-cleaning.

会议

TiO2 filmsAtmosphere pressureDielectric barrier dischargeRadio frequency

A study on the characteristics of nitrogen doped thiophene plasma polymer by PECVD with controlled n

The nitrogen doped thiophene plasma polymer (ThioPP) was deposited on silicon(100) substrate by plasma enhanced chemical vapor deposition (PECVD) method as a function of nitrogen flow rate.

会议

Plasma PolymerElectrical propertiesPECVD

Evaluation of CVD diamond coating layers using non-specular reflection of Rayleigh waves

CVD diamond coating techniques are widely used for performance enhancement of mechanical properties,especially,components used in severe environments.

会议

CVD diamond coating layersRayleigh wavesnon-specular reflection

Coulomb explosion and energy loss of swift H3 + clusters through solid

The Colomb explosion and energy loss of swift H3 + clusters moving through carbon,silver,and aluminum has been calculated in framework of the linearized hydrodynamic-Poisson equations.

会议

Coulomb ExplosionEnergy LossWake EffectCluster

Application of the Hansen Solubility Parameter and Evaluation of Dispersion Stability to Using UV/oz

Carbon nanotubes (CNTs) have attracted considerable attention since their discovery due to a host of unique mechanical,thermal,and electrical properties.

会议

Multi-walled Carbon nanotubesUV/ozone treatmentHansen solubility parameters

Effects of pulsed bias on TiO2 thin films prepared on glass and silicon by arc ion plating and simul

TiO2 thin films were fabricated on glass and p-(100) silicon substrates by arc ion plating.The effects of pulsed negative bias on phase and growth of TiO2 films were investigated by applying a pulsed

会议

Pulsed biasTitanium dioxide filmsArc ion platingPlasma simulationsheath dyna

Effects of surface roughening on the light extraction efficiency of vertical light-emitting diodes

Recently,high brightness GaN-based blue light-emitting diodes (LEDs) have attracted considerable interests owing to their potential application in traffic signal,full-color displays,backlight of liqui

会议

Surface rougheningVertical LEDdual etching