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5. Effects of pulsed bias on TiO2 thin films prepared on glass and silicon by arc ion plating and simul

Effects of pulsed bias on TiO2 thin films prepared on glass and silicon by arc ion plating and simul

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：jinyeqin

【摘 要】

：

TiO2 thin films were fabricated on glass and p-(100) silicon substrates by arc ion plating.The effects of pulsed negative bias on phase and growth of TiO2 films were investigated by applying a pulsed

【作 者】

：

Min Zhang Guoqiang Lin Chuang Dong 

【机 构】

：

School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 China;Fuel Ce

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Pulsed bias Titanium dioxide films Arc ion plating Plasma simulation sheath dyna 

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TiO2 thin films were fabricated on glass and p-(100) silicon substrates by arc ion plating.The effects of pulsed negative bias on phase and growth of TiO2 films were investigated by applying a pulsed bias ranging from 0V to -900V on the substrates.

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