Interface modulation and resistive switching evolution in Ni/Al2O3/n+-Si device

来源 :第一届国际ALD应用大会暨第二届中国ALD学术交流会 | 被引量 : 0次 | 上传用户：mybose

【作者】

：

H.F.Zhai A.D.Li D.Wu

【机构】

：

National Laboratory of Solid State Microstructures,Department of Materials Science and Engineering,N

【出处】

：

第一届国际ALD应用大会暨第二届中国ALD学术交流会

【发表日期】

：

2012年4期

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