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  5. Characteristics of SiOx thin films deposited by modified chemical vapor deposition with the double a

Characteristics of SiOx thin films deposited by modified chemical vapor deposition with the double a

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：liuw_ei
【摘 要】
：
The atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) is considered as an emerging technology which not only offers advantage in cost reduction due to the lack of bulky and exp
【作 者】
：
JaeBeom Park GeunYoung Yeom 
【机 构】
：
SKKU Advanced Insitute of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do 440-746
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
Atmospheric Pressure PE-CVD SiOx Double Discharge system 
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The atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) is considered as an emerging technology which not only offers advantage in cost reduction due to the lack of bulky and expensive vacuum equipment,but also is compatible for continuous production lines and large-scale operation.
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