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In order to remove the cutting marks on the surface of the 6H-SiC cutting wafer, to investigate the mechanism ofthe abrasive grains in the lapping and optimize the component. Experiments were taken to investige the effect of abrasive(types, grain size, concentration, mixed abrasive) on the lapping surface properties of 6H-SiC. Research shows that the largegrain size、the high hardness abrasive result in higher material removal rate , while the small grain size、the low hardnessabrasive lead to lower surface roughness Ra value. When the abrasive concentration is of 7.69 weight percentage(wt％),good processing effect was obtained. Lower surface roughness Ra value can be obtained with certain proportion mixedabrasive while ensuring that the material removal rate. Selecting the appropriate abrasive results to the high-quality surfaceas well as the polishing can be efficiently.