An InAlAs/InGaAs/InAs quantum dots-quantum well in double barrier structure has proved best S (signal)/D (dark current) by simulated and analyzed at 3.5V an
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) nonvolatile memory devices with an IGZO charge storage layer were evaluated for the
In this paper, the impacts of ionizing radiation on the gate induced floating body effects (GIFEBs) and low-frequency (LF) noise for the 130nm partially dep
Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C 10H16 (LIMO) precursors by plasma enhanced chemical vapor
In this paper, a low offset high gain high resolution comparator is presented which is designed for a 16bit SAR ADC.The comparator consists of five stages p
This paper presents a LC digitally controlled oscillator (LC-DCO) applied in all digital phase locked loop (ADPLL).Post-layout simulation is finished in a 1