采用了基于光谱整形的窄曝光波段(305～355nm)新颖曝光技术以获得可与正胶曝光波长相比的分辨率。在直径50mm的氧化硅衬底上用AZ2415抗蚀剂应用真空接触方式复印出条宽0.2μm总长3cm的200行梳状曲折线图形。条宽变化的平均标准偏差仅有300(?),而且抗蚀剂图形断面显示出厚-宽比为2:1或更好的垂直剖面。 A novel exposure technique based on spectral shaping in the narrow exposure band (305 ~ 355nm) was used to obtain a resolution comparable to the positive exposure wavelength. On a 50mm diameter silicon oxide substrate, AZ2415 resists were vacuum-contacted to form a 200-line comb-bent line pattern with a total width of 0.2μm and a length of 3cm. The average standard deviation of strip width variation was only 300 (?), And the resist pattern cross section showed a vertical profile of 2: 1 or better in aspect ratio.