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Ｓｉ／Ｓｉ１－ｘＧｅｘ异质结系统已成功地应用于高速数字、高频微波和光电器件中。对这些器件进行理解和分析时，往往受到应变Ｓｉ１－ｘＧｅｘ材料参数缺乏的制约。本文建立和给出了常温和低温下重要应变Ｓｉ１－ｘＧｅｘ层材料和Ｓｉ／Ｓｉ１－ｘＧｅｘ器件物理参数模型，对Ｓｉ／Ｓｉ１－ｘＧｅｘ异质结器件的理解、研究和设计有重要的实际意义。
Si / Si1-xGex heterojunction system has been successfully used in high-speed digital, high frequency microwave and optoelectronic devices. The understanding and analysis of these devices are often constrained by the lack of strained Si1-xGex material parameters. This paper establishes and gives the physical parameters model of Si1-xGex layer material and Si / Si1-xGex device under normal temperature and low temperature. It has important practical significance to understand, research and design Si / Si1-xGex heterojunction devices.