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在超大规模集成电路多层Cu布线CMP工艺中,抛光液是决定抛光速率、抛光表面状态和平坦化能力的重要因素。采用Plackett-Burman(PB)筛选实验对抛光液成分(磨料、氧化剂、活性剂、螯合剂)进行显著性因素分析,得出磨料、FA/O螯合剂Ⅱ型和氧化剂为显著性因素,并采用响应曲面法对其进行优化并建立了模型,最终得到以去除速率为评价条件的综合最优抛光液配比,为Cu抛光液配比优化及对CMP的进一步发展提供了新的思路与途径。
In super-large-scale integrated circuit multilayer Cu Cu CMP process, the polishing solution is an important factor in determining the polishing rate, polishing surface state and planarization capability. Using Plackett-Burman (PB) screening experiment, we analyzed the composition of the polishing solution (abrasive, oxidant, active agent and chelating agent) and found that abrasive, FA / O chelating agent Ⅱ and oxidant were significant factors, Response surface method to optimize and set up a model, and finally get the optimal removal rate for the evaluation of the conditions of the optimal polishing solution ratio for the optimization of Cu polishing solution ratio and the further development of CMP provides a new way of thinking and ways.