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研究了＜0001＞和＜1210＞晶向α－Al2O3单晶在高剂量的Y、Pt离子注入后产生的损伤，注入层的性能变化和退火行为。实验结果表明，在室温，171keV、1×1017／cm2Y离子注入的＜1210＞α－Al2O3单晶的表面层约有139nm厚被无定形化。而158keV、9×1017／cm2Pt离子注入的＜0001＞α-Al2O3单晶的表面层不产生无定形，且实际离子注入进衬底的剂量只有2．65×1016／cm2，绝大部分在注入过程中被溅射掉。注入后其表面层的硬度提高了大约50％。表面层的电阻率降低了12个数量级。在空气中退火后形成了随机取向的纳米量级大小的Pt微晶，表面层的硬度也有所降低，但仍稍高于未注入的单晶硬度。
The damage of the <0001> and <1210> -oriented α-Al2O3 single crystals after high dose Y and Pt ion implantation were investigated, and the properties of the implanted layer and the annealing behavior were investigated. The experimental results show that the surface layer of the <1210> α-Al2O3 single crystal ion-implanted at 171 keV and 1 × 10 17 / cm 2 Y is amorphous about 139 nm thick at room temperature. While the surface layer of the <0001> α-Al2O3 single crystal implanted with 158 keV and 9 × 10 17 / cm 2 Pt did not produce any amorphous state, and the actual dose of ions implanted into the substrate was only 2.65 × 10 16 / cm 2, Smashed during the process. The hardness of the surface layer after injection is increased by about 50%. The resistivity of the surface layer is reduced by 12 orders of magnitude. After annealing in air, randomly oriented nano-sized Pt crystallites were formed. The hardness of the surface layer was also reduced, but still slightly higher than that of uninjected single crystals.