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一、引言近年来,随着高亮度液态金属离子源的出现,亚微米聚焦离子束技术迅速发展。FIB(聚焦离子束)在半导体和微型特殊器件制作技术中将发挥越来越大的作用。日本日立用B~+FIB无掩模注入Si中,制作出一种新型亚微米沟道长度器件—离子束MOSFET,它在电流增益、漏极击穿电压和短沟道阈值效应等方面都优于传统方法制造的同类器件;在FIB无掩模刻蚀、曝光技术中,已获得30nm的高分辨率的图案;FIB已成功地制成分辨率小于0.25μm的同步辐射光、X射线曝光用的掩模;利用FIB还可修理亚微米的掩模缺陷,目前已有商品FIB掩模修正仪问世;用FIB刻蚀亚微米小孔阵列,可加工超导电子学器件。本文报道在我们设计加工的FIB系统上刻蚀金膜、硅片及自显影FIB曝光的实验结果。本系统已能进行亚微米级微细加工工艺研究。
I. INTRODUCTION In recent years, sub-micron focused ion beam technology has developed rapidly with the advent of high brightness liquid metal ion sources. FIB (focused ion beam) will play an increasingly important role in the fabrication of semiconductors and miniature special devices. Japan HITACHI B + FIB without mask into the Si, to create a new type of sub-micron channel length device - ion beam MOSFET, which in terms of current gain, drain breakdown voltage and short channel threshold effects are excellent The same type of device manufactured by the traditional method; in the FIB maskless etching, exposure technology, has obtained high-resolution 30nm pattern; FIB has successfully produced synchrotron radiation with a resolution of less than 0.25μm, X-ray exposure Of the mask; the use of FIB can also repair submicron mask defects, there are currently available FIB mask correction instrument available; FIB etching submicron aperture array can be processed superconducting electronic devices. This article reports the experimental results of etching gold, silicon and self-developed FIB exposures on the FIB system we designed and processed. The system has been able to sub-micron micro-processing technology research.