采用微波电子回旋共振等离子体增强化学气相沉积技术 ,在单晶硅衬底上制备了用于平面光波导的SiO2 薄膜 ,研究了沉积速率与工艺参数之间的关系 ,并对射频偏置对成膜特性的影响作了初步实验研究。通过X射线光电子能谱、傅立叶变换红外光谱、扫描电镜、原子力显微镜、以及扫描隧道显微镜三维形貌和椭偏仪等测量手段 ,分析了样品的薄膜结构和光学特性等。结果表明 ,在较低温度下沉积出均匀致密、性能优良的SiO2 薄膜。此外 ,还成功制备出掺Ge的SiO2 薄膜 ,并可以精确控制掺杂浓度 ,以适应不同光波导芯的要求 Using microwave electron cyclotron resonance plasma enhanced chemical vapor deposition technique, a SiO2 film for planar optical waveguide was prepared on a monocrystalline silicon substrate. The relationship between deposition rate and process parameters was studied. The membrane characteristics of the preliminary experimental study. The structure and optical properties of the samples were analyzed by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, atomic force microscopy, scanning electron microscopy (SEM) and ellipsometry. The results show that, at lower temperatures, a uniform and dense SiO2 film with excellent properties was deposited. In addition, the Ge-doped SiO2 film has been successfully prepared, and the doping concentration can be accurately controlled to meet the requirements of different optical waveguide cores