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报导不同注量下MeV硅离子注入半绝缘砷化镓衬底的激活能,随注量增加激活能增大。对相同注入条件分别经一步或两步快退火处理样品的电特性进行了比较,认为MeV硅离子注入砷化镓衬底的退火行为可以分为损伤恢复和杂质激活两步,其杂质激活与点缺陷的运动有关。从能量角度分析了两步快退火优于一步快退火的原因。
It is reported that the activation energy of semi-insulating gallium arsenide substrate implanted by MeV silicon under different fluence increases with the increase of fluence. The electrical properties of samples annealed by one or two steps at the same implantation conditions were compared. It is considered that the annealing behavior of the GaAs substrate implanted with MeV silicon ions can be divided into two steps: damage recovery and impurity activation, Defective movement related. From the energy point of view, two-step rapid annealing is better than one-step rapid annealing.