论文部分内容阅读
用多层加热器VM-LEC工艺和同时掺镓和砷拉制了直径为2in的半绝缘低位错磷化铟单晶。熔体中镓和砷的浓度小于10~(19)～10~(20)cm~(-3)就能有效地把位错减小到1～5×10~3/cm~(-2)。镓和砷的掺入没有影响电阻率和光荧光谱。在单晶上生长的外延层中没有观察到失配位错。
The semi-insulating low dislocation indium phosphide single crystal with a diameter of 2in was fabricated by multilayer heater VM-LEC process and simultaneous gallium and arsenic. When the concentration of gallium and arsenic in the melt is less than 10 ~ (19) ~ 10 ~ (20) cm ~ (-3), the dislocation can be effectively reduced to 1 ~ 5 × 10 ~ 3 / cm ~ . Incorporation of gallium and arsenic did not affect the resistivity and the fluorescence spectrum. No misfit dislocations were observed in epitaxial layers grown on single crystals.