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We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (～5.9×10 10 cm-2 ) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.
We develop a modified two-step method of growing high-density and narrow size-distribution InAs / GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount At the second step, the deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (~ 5.9 × 10 10 cm-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.