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最近,我们试用氮化硼园片作为硼扩散源,经实验证明,结果良好,无论在结特性、表面电阻的均匀性和重复性等方面,均比其他硼扩散源优越。我们采用的氮化硼园片的直径为35毫米,厚度2毫米,纯度约99.999%。考虑到在高温下(1000℃以上)氮化硼园片与硅片和石英相粘,以及氮化硼园片的热膨胀系数与石英的热膨胀系数的不匹配性,设计了层式扩散舟。氮化硼园片放置在扩散舟中间一层,使氮化硼园片与硅片之间保持一定间距。硅片只与石英舟接触,而氮化硼园片则不与石英舟接触,这种层式扩散
Recently, we have experimented with boron nitride wafer as a diffusion source of boron. The results of experiments show that the results are good, which is superior to other boron diffusion sources in terms of junction characteristics, surface resistance uniformity and repeatability. We use the boron nitride wafer diameter of 35 mm, thickness 2 mm, purity of about 99.999%. Taking into account the high temperature (above 1000 ℃) boron nitride wafer and silicon and quartz sticky, as well as the thermal expansion coefficient of boron nitride wafer and quartz thermal expansion coefficient of the mismatch, designed layered diffusion boat. Boron nitride wafer placed in the middle of a diffusion boat, so that the boron nitride wafer and wafer to maintain a certain distance between. The silicon wafer is only in contact with the quartz boat, while the boron nitride wafer does not come in contact with the quartz boat. This layer diffusion